METHOD FOR PRODUCING TRANSPARENT SOI WAFERS

摘要

A method for producing a transparent SOI wafer by which wafer damage and chipping can be prevented is provided. The method for producing a transparent SOI wafer comprises the steps of: bonding a surface of a silicon wafer used as a donor wafer and a surface of a transparent handle wafer together to obtain a bonded wafer; heat-treating the bonded wafer at a first temperature of 150 to 300°C as a first heat treatment; cutting off an unbonded portion of the bonded wafer by irradiating a visible light laser from a silicon wafer side of the heated bonded wafer to a boundary between the bonded surface and an unbonded circumferential surface, while keeping an angle of 60 to 90° between the incident light and a radial direction of the silicon wafer; subjecting the silicon wafer of the bonded wafer having the unbonded portion cut off to grinding, polishing, or etching to form a silicon film; and heat-treating the bonded wafer having the silicon film formed at a second temperature of 300 to 500°C as a second heat treatment which is higher than the first temperature.