发明名称 |
SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON |
摘要 |
Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material 12 for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm, a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph. |
申请公布号 |
EP2657376(A4) |
申请公布日期 |
2014.07.02 |
申请号 |
EP20110851187 |
申请日期 |
2011.06.29 |
申请人 |
TOYO TANSO CO., LTD. |
发明人 |
TORIMI, SATOSHI;NOGAMI, SATORU;MATSUMOTO, TSUYOSHI |
分类号 |
C30B29/36;C30B19/12;C30B28/12 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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