发明名称 Method for manufacturing a light-emitting diode having a heterogeneous AlGaN layer
摘要 <p>Manufacturing LED, comprises: forming a stack of layers intended to emit light comprising first, second and third layers of aluminum gallium nitride, the second layer, positioned between the first and third layers, having a different aluminum gallium nitride composition from that of the first and third layers; and implementing demixing of the second layer of aluminum gallium nitride carried out after formation of the second layer. An independent claim is also included for LED obtained by the process.</p>
申请公布号 EP2750204(A1) 申请公布日期 2014.07.02
申请号 EP20130199122 申请日期 2013.12.20
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 DAUDIN, BRUNO
分类号 H01L33/00;H01L33/06 主分类号 H01L33/00
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