| 摘要 |
<p>The inductance device (4) includes: a magnetic metal substrate (2) comprising a metallic substrate (10) having first permeability, a first insulating layer (16a) disposed in the metallic substrate (10), and a first metallic wiring layer (22) having second permeability and disposed on the first insulating layer (16a); a first gap layer (24) disposed on the front side surface of the magnetic metal substrate (2); and a first magnetic flux generation layer (26) disposed on the first gap layer (24). There are provide a thin magnetic metal substrate adaptable to the large current use and advantageous in the high frequency characteristics; and an inductance device to which such a magnetic metal substrate are applied, wherein the inductance device is adaptable to smaller mounting area, larger inductance values, and large current use and advantageous in high frequency characteristics.</p> |
