| 摘要 |
A power semiconductor device includes a substrate (14), an element circuit pattern (16) formed on the substrate (14) and made of Cu optionally covered with an electroless-plated Ni-P layer, and a power semiconductor element (40,42) bonded to the element circuit pattern (16) by a solder (30,32), wherein the solder (30,32) is an alloy of Sn, Sb, and Cu, the Sb content being in the range of 6.5 to 8 weight % and the Cu content being in the range of 0.5 to 1 weight %. A terminal (52) is bonded to a terminal circuit pattern (18, 20) formed on the substrate (14) by a terminal solder (50) made of a Sn-Ag-based or Sn-Ag-Cu-based unleaded solder. A heat sink (46) is bonded to a surface pattern (22) formed on the bottom surface the substrate (14) by a solder (34) having the same composition as the Sn-Sb-Cu solder (30, 32). |
