| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist underlayer film-forming method capable of forming a resist underlayer film that has a function as an antireflective film and that is excellent in pattern transfer performance and etching resistance, to provide an underlayer film that does not bend in micronized pattern transfer and a method of forming the underlayer; and also to provide a pattern forming method. <P>SOLUTION: The resist underlayer film is formed of a composition containing (A) a resin containing an aromatic ring and (B) a compound expressed by general formula (i). <P>COPYRIGHT: (C)2011,JPO&INPIT |
