发明名称 |
SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF |
摘要 |
The purpose of the present invention is to provide a good ohmic contact for an n-type Group-III nitride semiconductor. An n-type GaN layer and a p-type GaN layer are sequentially formed on a lift-off layer (growth step). A p-side electrode is formed on the top face of the p-type GaN layer. A copper block is formed over the entire area of the top face through a cap metal. Then, the lift-off layer is removed by making a chemical treatment (lift-off step). Then, a laminate structure constituted by the n-type GaN layer, with which the surface of the N polar plane has been exposed, and the p-type GaN layer is subjected to anisotropic wet etching (surface etching step). The N-polar surface after the etching has irregularities constituted by {10-1-1} planes. Then, an n-side electrode is formed on the bottom face of the n-type GaN layer (electrode formation step). |
申请公布号 |
EP2660855(A4) |
申请公布日期 |
2014.07.02 |
申请号 |
EP20100861317 |
申请日期 |
2010.12.28 |
申请人 |
DOWA ELECTRONICS MATERIALS CO., LTD.;WAVESQUARE INC. |
发明人 |
TOBA, RYUICHI;KADOWAKI, YOSHITAKA;CHO, MEOUNG WHAN;LEE, SEOG WOO;JANG, PIL GUK |
分类号 |
H01L33/32;H01S5/323 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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