发明名称 |
SEMICONDUCTOR DEVICE STRUCTURES INCLUDING VERTICAL TRANSISTOR DEVICES, ARRAYS OF VERTICAL TRANSISTOR DEVICES, AND METHODS OF FABRICATION |
摘要 |
A semiconductor device structure is disclosed. The semiconductor device structure includes a mesa extending above a substrate. The mesa has a channel region between a first side and second side of the mesa. A first gate is on a first side of the mesa, the first gate comprising a first gate insulator and a first gate conductor comprising graphene overlying the first gate insulator. The gate conductor may comprise graphene in one or more monolayers. Also disclosed are a method for fabricating the semiconductor device structure; an array of vertical transistor devices, including semiconductor devices having the structure disclosed; and a method for fabricating the array of vertical transistor devices. |
申请公布号 |
EP2748856(A2) |
申请公布日期 |
2014.07.02 |
申请号 |
EP20120825988 |
申请日期 |
2012.08.21 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU, GURTEJ S. |
分类号 |
H01L29/78;B82Y10/00;H01L21/336;H01L21/8234;H01L27/105;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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