发明名称
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for producing a gas barrier film excelling in a gas barrier property and bending resistance, usable of a flexible resin film, and high in an industrial value because of suppressing process pollution; and an organic electronic element such as an organic photoelectric conversion element and an organic EL element using the same. <P>SOLUTION: In this gas barrier film, a polysilazane coating layer is formed at least on one surface of a base material, and modified by excimer lamp irradiation to be converted into a barrier layer. In the gas barrier film, an element ratio measured in the depth direction of XPS of the barrier layer satisfies the following expressions (1-1), (2-1) and (3-1). Expression (1-1): 1.0<O/Si≤2.3 at 5% of the front surface side in the depth direction of the barrier layer. Expression (2-1): 0.2<O/Si≤2.0 at 95% of the base material side in the depth direction of the barrier layer. Expression (3-1): 0≤N/Si≤0.8 in the whole area in the depth direction of the barrier layer. <P>COPYRIGHT: (C)2012,JPO&INPIT</p>
申请公布号 JP5540949(B2) 申请公布日期 2014.07.02
申请号 JP20100154624 申请日期 2010.07.07
申请人 发明人
分类号 B05D7/24;B05D3/06;B32B9/00;H01L51/42;H01L51/50;H05B33/02;H05B33/10 主分类号 B05D7/24
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