发明名称 |
METHOD OF MANUFACTURE OF AN OPTOELECTRONIC DEVICE AND AN OPTOELECTRONIC DEVICE MANUFACTURED USING THE METHOD |
摘要 |
A method of manufacture of an optoelectronic device includes the steps of: providing or forming a body of crystalline silicon containing substitutional carbon atoms, and irradiating said body of crystalline silicon with protons (H+) to create radiative defect centers in a photoactive region of the device, wherein at least some of said defect centers are G-center complexes having the form Cs—SiI—Cs, where Cs is a substitutional carbon atom and S¾ is an interstitial silicon atom. An optoelectronic device (FIG. 3) manufactured using the method is described. |
申请公布号 |
EP2748869(A1) |
申请公布日期 |
2014.07.02 |
申请号 |
EP20120751028 |
申请日期 |
2012.08.09 |
申请人 |
THE UNIVERSITY OF SURREY |
发明人 |
HOMEWOOD, KEVIN, PETER;GWILLIAM, RUSSELL, MARK |
分类号 |
H01L33/02;H01L33/00 |
主分类号 |
H01L33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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