| 摘要 |
A semiconductor device includes a semiconductor substrate having an active region and an isolation region. A gate structure is provided on the semiconductor device. First and second impurity regions are provided in the substrate on both sides of the gate structure. A pad electrode is provided to contact the first impurity region. Because the pad electrode is provided on the first impurity region of the semiconductor device, the contact plug does not directly contact the active region. Accordingly, failures caused by damage to the active region may be prevented. |
