| 发明名称 |
METHODS FOR FABRICATING PASSIVATED SILICON NANOWIRES AND DEVICES THUS OBTAINED |
| 摘要 |
Methods for fabricating passivated silicon nanowires and an electronic arrangement thus obtained are described. Such arrangements may comprise a metal-oxide-semiconductor (MOS) structure such that the arrangements may be utilized for MOS field-effect transistors (MOSFETs) or opto-electronic switches. |
| 申请公布号 |
EP2446467(A4) |
申请公布日期 |
2014.07.02 |
| 申请号 |
EP20100792619 |
申请日期 |
2010.06.23 |
| 申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
SCHERER, AXEL;WALAVALKAR, SAMEER;HENRY, MICHAEL D.;HOMYK, ANDREW P. |
| 分类号 |
H01L21/336;B82Y10/00;H01L29/06;H01L29/41;H01L29/775 |
主分类号 |
H01L21/336 |
| 代理机构 |
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