发明名称 |
PARTIAL SPEED AND FULL SPEED PROGRAMMING FOR NON-VOLATILE MEMORY USING FLOATING BIT LINES |
摘要 |
<p>Partial speed and full speed programming are achieved for a non-volatile memory system. During a program operation, in a first time period, bit lines of storage elements to be inhibited are pre-charged, while bit line of storage elements to be programmed at a partial speed and bit lines of storage elements to be programmed at a full speed are fixed. In a second time period, the bit lines of storage elements to be programmed at the partial speed are driven higher, while the bit lines of storage elements to be inhibited are floated and the bit line of storage elements to be programmed remain fixed. In a third time period, the bit lines of storage elements to be inhibited are driven higher while the bit lines of the storage elements to be programmed at the partial speed or the full speed are floated so that they couple higher.</p> |
申请公布号 |
EP2471066(B1) |
申请公布日期 |
2014.07.02 |
申请号 |
EP20100747138 |
申请日期 |
2010.08.23 |
申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
MUI, MAN;DONG, YINGDA;LE, BINH;DUTTA, DEEPANSHU |
分类号 |
G11C11/56;G11C16/10;G11C16/34 |
主分类号 |
G11C11/56 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|