METHOD FOR MANUFACTURING CIGS PHOTORECEPTIVE LAYER USING LASER

摘要

Provided is a method for manufacturing a CIGS light absorption layer using laser which includes: a step of forming a copper-indium-gallium-selenium (CIGS) or copper-indium-gallium (CIG) seed layer on a substrate; a step of crystallizing the seed layer by emitting the laser; and a step of forming a CIGS or CIG light adsorption layer by growing the crystallized seed layer. The thickness of the seed layer is 300 nm or less (except 0 nm). According to the present invention, the crystallinity of the light absorption layer is excellent. Process speed is improved. The deformation of a substrate is not generated.