Memory cell

摘要

#CMT# #/CMT# The cell (10) has distinct memory zones (17) formed in a resistivity-change material (14), and a heating element (16) provided for each of the zones. The heating element has an end connected to supply voltage (V1) and another end that is in contact with the resistivity-change material. The resistivity-change material is arranged in a single block (34) common to each of the memory zones, to locally create each of the memory zones. An access transistor i.e. NPN bipolar junction transistor (30), allows programming of the cell and includes a collector formed by the single block of the material. #CMT# : #/CMT# Independent claims are also included for the following: (1) an integrated circuit (2) a method for manufacturing a memory cell. #CMT#USE : #/CMT# Non-volatile memory cell such as autonomous phase change memory cell e.g. metal oxide (Ox) RAM cell, for use in an integrated circuit (claimed). #CMT#ADVANTAGE : #/CMT# The resistivity-change material is arranged in the single block common to each of the memory zones, to locally create each of the memory zones, thus reducing the size of the memory cell, and hence increasing memory density of a system integrating the memory cell. The single block of the resistivity-change material is available for the entire memory cell to facilitate the production of the memory cell. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a perspective view of a structure of an autonomous phase-change memory cell with an access device for programming the cell.'(Drawing includes non-English language text)' V1-VN : Supply voltages 10 : Autonomous phase-change memory cell 14 : Resistivity-change material 16 : Heating element 17 : Memory zones 30 : NPN bipolar junction transistor 34 : Single block of resistivity-change material #CMT#INORGANIC CHEMISTRY : #/CMT# The transistor has a base and an emitter formed of metal oxides chosen from p-doped copper oxide, n-doped indium zinc oxide, gold-zinc oxide, silver-zinc oxide, nickel oxide-indium zinc oxide, zirconium oxide-zinc oxide, strontium copper oxide-zinc oxide and polysilicon. The resistivity-change material is an oxide chosen from among following oxides such as cuprous oxide, silicon dioxide, hafnium dioxide, nickel oxide, zinc oxide, aluminum oxide or alumina, vanadium dioxide and strontium titanate. #CMT#METALLURGY : #/CMT# The resistivity-change material is chosen from alloys such as germanium-antimony telluride, germanium telluride, carbon-doped germanium telluride, nitrogen-doped germanium telluride, germanium antimonide, gallium antimonide, indium germanium telluride and oxygen-doped germanium-antimony telluride.