SEMICONDUCTOR DEVICE HAVING BURIED METAL SILICIDE LAYER AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device having a buried metal silicide layer of the present invention includes a plurality of active pillars which is spaced apart from each other on a substrate by a trench; a buried metal silicide layer which is disposed on the lower part of the active pillars; and an active region which is disposed on the upper part of the active pillars and has an impurity bonding region.