发明名称 Apparatuses, devices and methods for sensing a snapback event in a circuit
摘要 Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.
申请公布号 US8767482(B2) 申请公布日期 2014.07.01
申请号 US201113213018 申请日期 2011.08.18
申请人 Micron Technology, Inc. 发明人 Hirst Jeremy;Castro Hernan;Tang Stephen
分类号 G11C7/00 主分类号 G11C7/00
代理机构 Knobbe, Martens, Olson & Bear, LLP 代理人 Knobbe, Martens, Olson & Bear, LLP
主权项 1. A method comprising: initiating application of an electric potential to a circuit; and initiating a change in the application of the electric potential in response to a determination that a snapback event has occurred in the circuit, wherein the circuit is capable of producing a plurality of snapback event levels, and wherein initiating the application of the electric potential to the circuit further comprises differentiating between the plurality of snapback event levels based, at least in part, by selecting the electric potential for a particular one of the plurality of snapback event levels.
地址 Boise ID US