发明名称 Non-volatile memory apparatus and methods
摘要 Some embodiments include apparatus and methods having memory cells coupled in series and a module to cause an application of voltages with at least three different values to gates of the memory cells during an operation to retrieve information stored in at least one of the memory cells. Additional apparatus and methods are described.
申请公布号 US8767472(B2) 申请公布日期 2014.07.01
申请号 US201313862999 申请日期 2013.04.15
申请人 Micron Technology, Inc. 发明人 Ruby Paul D.
分类号 G11C16/00;G11C16/10;G11C16/26;G11C16/04;G11C16/34 主分类号 G11C16/00
代理机构 Schwegman, Lundberg & Woessner, P.A. 代理人 Schwegman, Lundberg & Woessner, P.A.
主权项 1. An apparatus comprising: a first memory cell; a second memory cell located on a first side of the first memory cell; a third memory cell located on a second side the first memory cell; a fourth memory cell located on the first side of the first memory cell; a fifth memory cells located on the second side the first memory cell; anda module configured to apply, during a memory operation, a first voltage to a gate of the first memory cell, a second voltage to a gate of the second memory cell and a gate of the third memory cell, and a third voltage to a gate of the fourth memory cell and a gate of the fifth memory cell, wherein the first, second, and third voltages have different values, wherein the fourth memory cell is immediately adjacent the first memory cell, and a value of the third voltage is greater than a value of the second voltage.
地址 Boise ID US