Apparatus relating to a memory cell having a floating body

摘要

An apparatus is disclosed for a memory cell having a floating body. A memory cell may include a transistor over an insulation layer, the transistor including a source, and a drain. The memory cell may also include a floating body including a first region positioned between the source and the drain, a second region positioned remote from each of the source and drain, and a passage extending through the insulation layer and coupling the first region to the second region. Additionally, the memory cell may include a bias gate at least partially surrounding the second region and configured for operably coupling to a bias voltage. Furthermore, the memory cell may include a plurality of dielectric layers, wherein each outer vertical surface of the second region has a dielectric layer of the plurality adjacent thereto.

主权项

1. An apparatus, comprising:
a memory cell including:
a substrate;a floating body overlying the substrate, the floating body including a first region and a second region that are at least partially separated from each other by an insulating material that defines a passage between the first region and the second region, wherein the first region of the floating body at least partially overlies the insulating material; anda transistor overlying the floating body, the transistor including a source, a drain, and a gate that are proximate to the first region and remote from the second region of the floating body.