| 发明名称 |
Memelectronic device |
| 摘要 |
A memelectronic device may have a first and a second electrode spaced apart by a plurality of materials. A first material may have a memory characteristic exhibited by the first material maintaining a magnitude of an electrically controlled physical property after discontinuing an electrical stimulus on the first material. A second material may have an auxiliary characteristic. |
| 申请公布号 |
US8767438(B2) |
申请公布日期 |
2014.07.01 |
| 申请号 |
US201213424034 |
申请日期 |
2012.03.19 |
| 申请人 |
Hewlett-Packard Development Company, L.P. |
发明人 |
Yang Jianhua;Choi Byungjoon;Zhang Minxian Max;Ribeiro Gilberto Medeiros;Williams R. Stanley |
| 分类号 |
G11C13/00;G11C7/00;H01L45/00;H01L47/00;H01L27/24;H01L21/8239 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memelectronic device, comprising:
a first electrode and a second electrode spaced apart by a plurality of materials; a first material of said plurality comprises a memory characteristic wherein said first material maintains a magnitude of an electrically controlled physical property after an electrical stimulus on said first material has been discontinued; and a second material of said plurality, which is different and separate from said first material comprising said memory characteristic, wherein said second material comprises an auxiliary characteristic that affects an electrical property of said memelectronic device. |
| 地址 |
Houston TX US |
