发明名称 |
Organic EL display and method of manufacturing organic EL display |
摘要 |
It is possible to manufacture a large-size, high-accuracy organic EL display using a plastic substrate and an organic EL display using a roll-shaped long plastic substrate.;The organic EL display includes an organic EL device A having at least a lower electrode 300, an organic layer including at least a light emitting layer, and an upper electrode 305 and a thin film transistor B on a transparent plastic substrate 100, a source electrode or drain electrode of the thin film transistor B is connected to the lower electrode 300, the plastic substrate 100 has a gas barrier layer 101a, the thin film transistor B is formed on the gas barrier layer 101a, the thin film transistor B includes an active layer 203 containing a non-metallic element which a mixture of oxygen (O) and nitrogen (N) and has a ratio of N to O (N number density/O number density) from 0 to 2, and the organic EL device A is formed at least on the gas barrier layer 101a or one the thin film transistor B. |
申请公布号 |
US8766273(B2) |
申请公布日期 |
2014.07.01 |
申请号 |
US201013580847 |
申请日期 |
2010.03.04 |
申请人 |
Sumitomo Chemical Company, Limited;Sumitomo Bakelite Co., Ltd. |
发明人 |
Otsuki Shigeyoshi;Eguchi Toshimasa;Yamaguchi Shinya;Okamoto Mamoru |
分类号 |
H01L27/14 |
主分类号 |
H01L27/14 |
代理机构 |
Flynn, Thiel, Boutell & Tanis, P.C. |
代理人 |
Flynn, Thiel, Boutell & Tanis, P.C. |
主权项 |
1. An organic EL display which includes an organic EL device having at least a lower electrode, an organic layer including at least a light emitting layer, and an upper electrode and a thin film transistor on a transparent plastic substrate,
wherein a source electrode or a drain electrode of the thin film transistor is connected to the lower electrode, wherein the plastic substrate has a gas barrier layer, wherein the thin film transistor is formed on the gas barrier layer, wherein the thin film transistor includes an active layer containing a non-metallic element which is a mixture of oxygen and nitrogen and has a ratio of nitrogen number density to oxygen number density of from 0 to 2, and wherein the organic EL device is formed at least on the gas barrier layer or on the thin film transistor. |
地址 |
Tokyo JP |