发明名称 Photoelectric conversion device and method of manufacturing the same
摘要 A photoelectric conversion device is provided in which a first photoelectric conversion module having a plurality of first photoelectric conversion elements formed on one surface of a first translucent insulated substrate and a second photoelectric conversion module having a plurality of photoelectric conversion elements formed on one surface of a second translucent insulated substrate are bonded together with the first photoelectric conversion elements and the second photoelectric conversion elements placed on an inner side. The photoelectric conversion device includes a plurality of photoelectric conversion element pairs formed by electrically connecting, in series, the first photoelectric conversion elements and the second photoelectric conversion elements arranged in positions opposed to each other. All the photoelectric conversion element pairs are electrically connected in series.
申请公布号 US8766085(B2) 申请公布日期 2014.07.01
申请号 US201013256813 申请日期 2010.03.16
申请人 Mitsubishi Electric Corporation 发明人 Tokioka Hidetada;Yamarin Hiroya;Orita Tae
分类号 H01L31/00;H01L21/00;H01L25/04;H01L31/05;H01L31/0216 主分类号 H01L31/00
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A photoelectric conversion device comprising: a first photoelectric conversion module having a plurality of first photoelectric conversion elements formed on one surface of a translucent first insulated substrate and a second photoelectric conversion module having a plurality of second photoelectric conversion elements formed on one surface of a second insulated substrate, wherein each of the first photoelectric conversion elements comprises, in sequential order from the translucent first insulated substrate, a first transparent electrode layer, a first thin-film semiconductor layer laminated on the first transparent electrode layer, and a second transparent electrode layer laminated on the first thin-film semiconductor layer; wherein each of the second photoelectric elements comprises, in sequential order from the second insulated substrate, a reflective metal electrode layer, a second thin-film semiconductor layer laminated on the reflective metal electrode layer, and a third transparent electrode layer laminated on the second thin-film semiconductor layer; wherein the first and second photoelectric conversion elements are bonded together with the second transparent electrode layers of the first photoelectric conversion elements disposed opposite the third transparent electrode layers of the second photoelectric conversion elements to obtain a plurality of opposed pairs of first and second photoelectric conversion elements; wherein first conductive layers are disposed to directly contact the second transparent electrode layers of the first photoelectric conversion elements and the third transparent electrode layers of the second photoelectric conversion elements to electrically connect the first and second photoelectric conversion element of each opposed pair in series; and wherein second conductive layers are disposed to directly contact the first transparent electrode layers of the first photoelectric conversion elements and the reflective metal electrode layers of the second photoelectric conversion elements to electrically connect each opposed pair of first and second photoelectric conversion elements in series.
地址 Tokyo JP