发明名称 Microfeature workpiece processing system for, e.g., semiconductor wafer analysis
摘要 The present disclosure suggests apparatus and methods that can be used to chemically process microfeature workpieces, e.g., semiconductor wafers. One implementation of the invention provides a method in which a surface of a microfeature workpiece is contacted with an etchant liquid. The wall of the processing chamber may be highly transmissive of an operative wavelength range of radiation, but the etchant liquid is absorptive of the operative wavelength range. The etchant liquid is heated by delivering radiation through the wall of a processing chamber. This permits processing chambers to be formed of materials (e.g., fluoropolymers) that cannot be used in conventional systems that must conduct heat through the wall of the processing chamber.
申请公布号 US8765000(B2) 申请公布日期 2014.07.01
申请号 US201012833727 申请日期 2010.07.09
申请人 Micron Technology, Inc. 发明人 Palsulich David A.;Baldner Ronald F.
分类号 H01L21/302;B44C1/22;H01L21/322 主分类号 H01L21/302
代理机构 Perkins Coie LLP 代理人 Perkins Coie LLP
主权项 1. A method of processing a microfeature workpiece, comprising: supporting a microfeature workpiece in an interior of a processing chamber having a wall, the wall of the processing chamber being constructed substantially completely from a polymeric material; contacting a surface of the microfeature workpiece in the processing chamber with an etchant liquid; heating the etchant liquid by delivering radiation from a radiation source through the wall of the processing chamber to heat the etchant liquid, the wall being more transmissive of an operative wavelength range of the radiation than the etchant liquid; and controlling the radiation source to maintain a temperature of the etchant liquid at or above a target process temperature to etch the surface of the microfeature workpiece.
地址 Boise ID US