Electroless Cu plating for enhanced self-forming barrier layers

摘要

Methods and an apparatus are described for an integrated circuit within which an electroless Cu plated layer having an oxygen content is formed on the top of a seed layer comprising Cu and Mn. The integrated circuit is then exposed to a sufficient high temperature to cause the self-formation of a MnSiOx barrier layer.

主权项

1. A semiconductor device, comprising:
a dielectric layer having a trench; a MnSiOx layer lining the trench; a seed layer comprising Cu and Mn over the MnSiOx layer; and a first Cu layer having an oxygen content over the seed layer.