METHOD OF MANUFACTURING A PHASE-CHANGE MEMORY DEVICE

摘要

According to the method of manufacturing a phase-change memory device, an inter-layer dielectric layer for receiving a lower electrode and a phase-change material layer pattern sequentially laminated on a substrate is formed. An upper electrode layer and a sacrificial layer are sequentially formed on the phase-change material layer pattern and the interlayer dielectric layer. A recess to expose the interlayer dielectric layer is formed by partially removing the sacrificial layer and the upper electrode layer. Accordingly, the upper electrode and the sacrificial layer pattern sequentially stacked on the phase-change material layer pattern are formed. An insulating layer pattern is formed to be filled in the recess. An opening is formed by removing the sacrificial layer to expose a top surface of the upper electrode. A bit line filling the opening is formed on the top surface of the exposed electrode. Accordingly, misalignment problems between the upper electrode and the bit line can be solved, so that a semiconductor device having a superior operating characteristic can be manufactured.