Semiconductor device performing self refresh operation

摘要

When refresh activation signals (REFACT0 to REFACT3) are supplied, the internal memory cells in two or more memory banks (0 to 3) are refreshed. A refresh control circuit performs a first refresh control operation to activate a refresh operation in all of the memory banks when an auto refresh command is supplied, and performs a second refresh control operation to activate a refresh operation in a part of the memory banks when a self refresh command is supplied.

主权项

1. A semiconductor device comprising:
a plurality of memory banks each of which performs a refresh operation on a plurality of memory cells included therein when an associated one of refresh activation signals is activated; and a refresh control circuit that performs a first refresh control operation when an auto refresh command is issued and performs a second refresh control operation when a self refresh command is issued, the refresh control circuit activating all the refresh activation signals during the first refresh control operation, and the refresh control circuit activating a part of the refresh activation signals without activating remaining one or ones of the refresh activation signals during the second refresh control operation.