| 发明名称 | Compound semiconductor device and method for manufacturing the same | ||
| 摘要 | A gate electrode is formed so as to embed an electrode material in a recess for an electrode, which has been formed in a structure of stacked compound semiconductors, through a gate insulation film, and also a field plate electrode that comes in Schottky contact with the structure of the stacked compound semiconductors is formed by embedding an electrode material in a recess for an electrode, which has been formed in the structure of the stacked compound semiconductors so that the field plate electrode directly comes in contact with the structure of the stacked compound semiconductors at least on the bottom face of the recess for the electrode. | ||
| 申请公布号 | US8765554(B2) | 申请公布日期 | 2014.07.01 |
| 申请号 | US201113325972 | 申请日期 | 2011.12.14 |
| 申请人 | Fujitsu Limited | 发明人 | Imada Tadahiro;Kikkawa Toshihide |
| 分类号 | H01L21/336 | 主分类号 | H01L21/336 |
| 代理机构 | Fujitsu Patent Center | 代理人 | Fujitsu Patent Center |
| 主权项 | 1. A compound semiconductor device comprising: a structure of stacked compound semiconductors, in which a first recess and a second recess are formed; a gate electrode formed in the first recess through a gate insulation film; and a field plate electrode which is formed in the second recess and comes in Schottky contact with the structure of the stacked compound semiconductors. | ||
| 地址 | Kawasaki JP | ||