Electron beam plasma chamber

摘要

A method and apparatus for tailoring the formation of active species using one or more electron beams to improve gap-fill during an integrated circuit formation process is disclosed herein. The energy of the electron beams may be decreased to maximize electrons leading to radicals or increased to maximize electrons leading to ions, depending on the fill application. An apparatus comprising multiple impinging jets of gas perpendicular to one or more electron beams is also disclosed.

主权项

1. A method of controlling an active species of one or more electron beams, said method sequentially comprising:
positioning a substrate in a processing chamber; flowing the one or more source gases into the processing chamber, wherein the source gas has an ionization threshold energy level and a dissociation threshold energy level; impinging the source gases with one or more electron beams at a first energy level, which is above the ionization threshold energy level of the source gas, to deposit a first layer of a desired thickness primarily on horizontal surfaces of the substrate; maintaining the flow of the one or more source gases into the processing chamber; and impinging the source gases with one or more electron beams at a second energy level, which is below the ionization threshold energy level and above the dissociation threshold energy level of the source gases, to favor depositing a second layer of a desired thickness on the substrate.