Film forming method and film forming apparatus

摘要

A film forming method includes a step of arranging a wafer, on which an insulating film is formed, in a processing chamber of a film forming apparatus and a surface modification step of supplying a compound gas containing silicon atoms and an OH group-donating gas into the processing chamber so that Si—OH groups are formed on the surface of the insulating film. The film forming method further includes a film forming step of supplying a film forming gas containing a manganese-containing material into the processing chamber so that a manganese-containing film is formed on the surface of the insulating film on which the Si—OH groups have been formed through a CVD method.

主权项

1. A film forming method comprising:
arranging an object to be processed, on which an insulating film is formed, in a processing chamber of a film forming apparatus; supplying a compound gas containing silicon atoms and an OH group-donating gas, or a compound gas containing silicon atoms and OH groups into the processing chamber so that Si—OH groups are formed on a surface of the insulating film, wherein only the Si—OH groups are substantially formed on the surface of the insulating film and wherein the Si—OH groups are formed on only the surface of the insulating film without increasing dielectric constant; and supplying a film forming gas including a manganese-containing material into the processing chamber so that a manganese-containing film made of MnOx is formed by CVD on the surface of the insulating film on which the Si—OH groups have been formed.