发明名称 |
SEMICONDUCTOR SUBSTRATE, AND METHOD THEREOF |
摘要 |
A semiconductor substrate comprises a growth substrate; a buffer layer that is installed on the growth substrate; a first nitride semiconductor layer that is installed on the growth substrate; a roughness structure that is installed on the first nitride semiconductor layer; a plurality of blocking patterns that is formed on either the buffer layer or the roughness structure; a second nitride semiconductor layer that is installed on the roughness structure; and a conductive semiconductor layer that is installed on the second nitride semiconductor layer. |
申请公布号 |
KR20140080819(A) |
申请公布日期 |
2014.07.01 |
申请号 |
KR20120148905 |
申请日期 |
2012.12.18 |
申请人 |
LG SILTRON INCORPORATED |
发明人 |
CHOI, YOUNG JAE;LEE, HO JUN;LEE, DONG KUN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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