发明名称 SEMICONDUCTOR SUBSTRATE, AND METHOD THEREOF
摘要 A semiconductor substrate comprises a growth substrate; a buffer layer that is installed on the growth substrate; a first nitride semiconductor layer that is installed on the growth substrate; a roughness structure that is installed on the first nitride semiconductor layer; a plurality of blocking patterns that is formed on either the buffer layer or the roughness structure; a second nitride semiconductor layer that is installed on the roughness structure; and a conductive semiconductor layer that is installed on the second nitride semiconductor layer.
申请公布号 KR20140080819(A) 申请公布日期 2014.07.01
申请号 KR20120148905 申请日期 2012.12.18
申请人 LG SILTRON INCORPORATED 发明人 CHOI, YOUNG JAE;LEE, HO JUN;LEE, DONG KUN
分类号 H01L21/20 主分类号 H01L21/20
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