Integrated circuit with self-aligned line and via

摘要

An integrated circuit is provided having a base with a first dielectric layer formed thereon. A second dielectric layer is formed over the first dielectric layer. A third dielectric layer is formed in spaced-apart strips over the second dielectric layer. A first trench opening is formed through the first and second dielectric layers between the spaced-apart strips of the third dielectric layer. A second trench opening is formed contiguously with the first trench opening through the first dielectric layer between the spaced-apart strips of the third dielectric layer. Conductor metals in the trench openings form self-aligned trench interconnects.

主权项

1. An integrated circuit comprising:
a base; a first dielectric layer over the base; a second dielectric layer over the first dielectric layer; a third dielectric layer over the second dielectric layer formed in spaced apart strips; a first trench opening vertically through the first and second dielectric layers between the spaced apart strips of the third dielectric layer; a second trench opening vertically only through a first stop layer, the second dielectric layer, and between the spaced apart strips of the third dielectric layer and contiguous with the first trench opening; and a conductor in the first and second trench openings forming a first and second self-aligned trench interconnect, the first and second trench openings possessing substantially of equal widths.