| 摘要 |
A semiconductor device includes a pipe channel layer formed over a substrate, a first vertical channel layer formed over the pipe channel layer to couple the pipe channel layer to a bit line, a second vertical channel layer formed over the pipe channel layer to couple the pipe channel layer to a source line, a multi-layer comprising a charge trap layer and formed to surround the first vertical channel layer, the second vertical channel layer, and the pipe channel layer, an insulating barrier layer formed to surround the multi-layer, a plurality of first conductive layers formed between the pipe channel layer and the bit line, wherein the first vertical channel layer passes through the first conductive layers, and a plurality of second conductive layers formed between the pipe channel layer and the source line, wherein the second vertical layer passes through the second conductive layers. |
| 主权项 |
1. A semiconductor device, comprising:
a pipe channel layer formed over a substrate; a first vertical channel layer formed over the pipe channel layer to couple the pipe channel layer to a bit line; a second vertical channel layer formed over the pipe channel layer to couple the pipe channel layer to a source line; a multi-layer comprising a charge trap layer and formed to surround the first vertical channel layer, the second vertical channel layer, and the pipe channel layer; an insulating barrier layer formed to completely surround the multi-layer formed on the pipe channel layer; a plurality of first conductive layers formed between the pipe channel layer and the bit line, wherein the first vertical channel layer passes through the first conductive layers; and a plurality of second conductive layers formed between the pipe channel layer and the source line, wherein the second vertical layer passes through the second conductive layers. |
