Semiconductor device and method for fabricating semiconductor device

摘要

A semiconductor device according to an embodiment, includes a plurality of gate structures; a first dielectric film; and a second dielectric film. The first dielectric film crosslinks adjacent gate structures of the plurality of gate structures so as to form a cavity each above and below in a position between the adjacent gate structures. The second dielectric film is formed as if to cover the cavity above the first dielectric film between the adjacent gate structures.

主权项

1. A semiconductor device, comprising:
a plurality of gate structures; a first dielectric film that builds a bridge over adjacent gate structures of the plurality of gate structures so as to form a first cavity above a position between the adjacent gate structures and a second cavity below the position between the adjacent gate structures; and a second dielectric film formed to cover the first cavity above the first dielectric film between the adjacent gate structures.