Memory devices with a connecting region having a band gap lower than a band gap of a body region

摘要

Memory devices are shown that include a body region and a connecting region that is formed from a semiconductor with a lower band gap than the body region. Connecting region configurations can provide increased gate induced drain leakage during an erase operation. Configurations shown can provide a reliable bias to a body region for memory operations such as erasing, and containment of charge in the body region during a boost operation.

主权项

1. A memory device, comprising:
a doped silicon body region; a source region coupled to a first end of the doped silicon body region, and a drain region coupled to a second end of the doped silicon body region; a plurality of gates along a length of the body region, each of the plurality of gates being separated from the doped silicon body region by a dielectric; a silicon germanium connecting region coupling the source region to the doped silicon body region; and a source select gate adjacent to the doped silicon body region and the silicon germanium connecting region.