发明名称 |
Area-efficient capacitor using carbon nanotubes |
摘要 |
An on-chip decoupling capacitor is disclosed. One or more carbon nanotubes are coupled to a first electrode of the capacitor. A dielectric skin is formed on the one or more carbon nanotubes. A metal coating is formed on the dielectric skin. The dielectric skin is configured to electrically isolate the one or more carbon nanotubes from the metal coating. |
申请公布号 |
US8765547(B2) |
申请公布日期 |
2014.07.01 |
申请号 |
US201313970081 |
申请日期 |
2013.08.19 |
申请人 |
International Business Machines Corporation |
发明人 |
Farmer Damon B.;Franklin Aaron D.;Han Shu-Jen;Tulevski George S. |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
Cantor Colburn LLP |
代理人 |
Cantor Colburn LLP ;Alexanian Vazken |
主权项 |
1. A method of forming an on-chip decoupling capacitor, comprising:
forming at least one trench in a first electrode of the capacitor; disposing one or more carbon nanotubes on the at least one trench of the first electrode of the capacitor; forming a dielectric skin on the one or more carbon nanotubes; and forming a metal coating on the dielectric skin, wherein the dielectric skin electrically isolates the one or more carbon nanotubes from the metal coating; and forming at least one prong on a second electrode that extends into the at least one trench of the first electrode. |
地址 |
Armonk NY US |