发明名称 Area-efficient capacitor using carbon nanotubes
摘要 An on-chip decoupling capacitor is disclosed. One or more carbon nanotubes are coupled to a first electrode of the capacitor. A dielectric skin is formed on the one or more carbon nanotubes. A metal coating is formed on the dielectric skin. The dielectric skin is configured to electrically isolate the one or more carbon nanotubes from the metal coating.
申请公布号 US8765547(B2) 申请公布日期 2014.07.01
申请号 US201313970081 申请日期 2013.08.19
申请人 International Business Machines Corporation 发明人 Farmer Damon B.;Franklin Aaron D.;Han Shu-Jen;Tulevski George S.
分类号 H01L21/8242 主分类号 H01L21/8242
代理机构 Cantor Colburn LLP 代理人 Cantor Colburn LLP ;Alexanian Vazken
主权项 1. A method of forming an on-chip decoupling capacitor, comprising: forming at least one trench in a first electrode of the capacitor; disposing one or more carbon nanotubes on the at least one trench of the first electrode of the capacitor; forming a dielectric skin on the one or more carbon nanotubes; and forming a metal coating on the dielectric skin, wherein the dielectric skin electrically isolates the one or more carbon nanotubes from the metal coating; and forming at least one prong on a second electrode that extends into the at least one trench of the first electrode.
地址 Armonk NY US