| 摘要 |
A light emitting device according to the present invention includes a substrate, a first conductive semiconductor layer which is formed on the substrate, an active layer which is formed on the first conductive semiconductor layer, a barrier layer which includes a hole injection improving layer which is formed on the active layer and a magnesium diffusion preventing layer which is formed on the hole injection improving layer, and a second conductive semiconductor layer which is formed on the barrier layer. The preset invention improves luminous intensity by forming the hole injection improving layer and the magnesium diffusion preventing layer between the second conductive semiconductor layer and the active layer. |
