发明名称 X-ray scattering measurement device and X-ray scattering measurement method
摘要 A X-ray scattering measurement device and measurement method can measure, with high resolution, the intensity of X-rays which have undergone small-angle scattering and diffraction with reflection geometry and can easily and accurately measure a microstructure on the surface of a sample. The X-ray scattering measurement device is suitable for microstructural measurement on the surface of a sample includes an X-ray source that generates an X-ray; a first mirror and a second mirror that continuously reflect the generated X-ray; a sample stage that supports the sample; and a two-dimensional detector that detects the X-ray scattered on the surface of the sample. The first mirror focuses the generated X-ray onto the two-dimensional detector within a plane parallel to the surface of the sample, and the second mirror focuses the X-ray reflected by the first mirror onto the surface of the sample within a plane perpendicular to the surface of the sample.
申请公布号 US8767918(B2) 申请公布日期 2014.07.01
申请号 US201013266842 申请日期 2010.04.14
申请人 Rigaku Corporation 发明人 Omote Kazuhiko;Verman Boris;Jiang Licai
分类号 G21K1/06;G01N23/201 主分类号 G21K1/06
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. An X-ray scattering measurement device suitable for microstructural measurement on a surface of a sample, said device comprising: an X-ray source that generates an X-ray; a first mirror that reflects said generated X-ray; a second mirror that reflects said X-ray reflected by said first mirror; a sample stage that supports said sample to which said X-ray reflected by said second mirror is irradiated; and a two-dimensional detector that detects said X-ray scattered on said surface of said sample, wherein said first mirror focuses said generated X-ray onto said two-dimensional detector within a plane parallel to said surface of said sample, and said second mirror focuses said X-ray reflected by said first mirror onto said surface of said sample within a plane perpendicular to said surface of said sample.
地址 Tokyo JP