Defect free strained silicon on insulator (SSOI) substrates

摘要

A method of forming a strained semiconductor material that in one embodiment includes forming a cleave layer in a host semiconductor substrate, and contacting a strain inducing material layer on a surface of a transfer portion of the host semiconductor substrate. A handle substrate is then contacted to an exposed surface of the stress inducing material layer. The transfer portion of the host semiconductor substrate may then be separated from the host semiconductor substrate along the cleave layer. A dielectric layer is formed directly on the transfer portion of the host semiconductor substrate. The handle substrate and the stress inducing material are then removed, wherein the transferred portion of the host semiconductor substrate provides a strained semiconductor layer that is in direct contact with a dielectric layer.

主权项

1. A method of forming a strained semiconductor material comprising:
providing a semiconductor on insulator (SOI) substrate that includes a semiconductor on insulator (SOI) layer that is present on a buried dielectric layer, wherein the buried dielectric layer is present on a first base semiconductor layer; contacting the SOI layer of the SOI substrate with a strain inducing material layer, wherein the strain inducing material layer is present on a handle substrate and the strain inducing material layer induces a strain in the SOI layer of the SOI substrate; separating the SOI substrate within the first base semiconductor layer; removing a remaining portion of the first base semiconductor layer that is present in contact with the buried dielectric layer to provide an exposed surface of the buried dielectric layer, wherein the removing of the remaining portion of the first base semiconductor layer to provide the exposed surface of the buried dielectric layer comprises an etch that is selective to the buried dielectric layer; contacting a second base semiconductor layer to the exposed surface of the buried dielectric layer, wherein the second base semiconductor layer retains strain in the SOI layer; and removing the strain inducing material layer and the handle substrate.