Method of manufacturing a base substrate for a semi-conductor on insulator type substrate

摘要

A method and system are provided for manufacturing a base substrate that is used in manufacturing a semi-conductor on insulator type substrate. The base substrate may be manufactured by providing a silicon substrate having an electrical resistivity above 500 Ohm·cm; cleaning the silicon substrate so as to remove native oxide and dopants from a surface thereof; forming, on the silicon substrate, a layer of dielectric material; and forming, on the layer of dielectric material, a layer of poly-crystalline silicon. These actions are implemented successively in an enclosure.

主权项

1. A method of manufacturing a high resistivity base substrate, which comprises:
(a) providing a silicon substrate having an electrical resistivity above 500 Ohm·cm, (b) cleaning the silicon substrate so as to remove native oxide and dopants from a surface thereof, providing, on the silicon substrate, a layer of dielectric material, (d) providing, on the layer of dielectric material, a layer of poly-crystalline silicon, and implementing steps (b), (c) and (d) successively in the same enclosure to minimize loss of resistivity of the poly-crystalline layer of the substrate.