Nonvolatile memory elements

摘要

Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.

主权项

1. A method of forming a nonvolatile memory element comprising:
forming a conductive electrode layer; forming a first layer, comprising an oxide of a first element, on the conductive electrode layer; forming a second layer, comprising an oxide of a second element, on the first layer; and processing the conductive electrode layer, the first layer and the second layer such that the combination of the first layer and the second layer comprises a resistive switching layer characterized by:
a high resistance state and a low resistance state,a set voltage Vs that switches the resistive switching layer from the high resistance state to a low resistance state, anda reset voltage Vr that switches the resistive switching layer from the low resistance state to the high resistance state; wherein at least one of the first element and the second element is selected such that the difference between Vs and Vr is greater than a predetermined value.