Method for manufacturing silicon carbide semiconductor device

摘要

A collector layer having p type is formed on a silicon carbide substrate having n type. A drift layer having n type is formed on a top surface side of the collector layer. A body region provided on the drift layer and having p type, and an emitter region provided on the body region to be separated from the drift layer by the body region and having n type are formed. A bottom surface side of the collector layer is exposed by removing the silicon carbide substrate.

主权项

1. A method for manufacturing a silicon carbide semiconductor device, comprising the steps of:
forming, on a silicon carbide substrate having n type, a collector layer having a bottom surface side facing said silicon carbide substrate and a top surface side opposite to said bottom surface side and having p type; forming a drift layer having n type on said top surface side of said collector layer; forming a body region provided on said drift layer and having p type, and an emitter region provided on said body region to be separated from said drift layer by said body region and having n type; forming a gate insulating film on said body region to connect said drift layer and said emitter region; forming a gate electrode on said gate insulating film; and exposing said bottom surface side of said collector layer by removing said silicon carbide substrate.