发明名称 |
Phase change memory cells and methods of forming phase change memory cells |
摘要 |
A phase change memory cell includes a first electrode having a cylindrical portion. A dielectric material having a cylindrical portion is longitudinally over the cylindrical portion of the first electrode. Heater material is radially inward of and electrically coupled to the cylindrical portion of the first electrode. Phase change material is over the heater material and a second electrode is electrically coupled to the phase change material. Other embodiments are disclosed, including methods of forming memory cells which include first and second electrodes having phase change material and heater material in electrical series there-between. |
申请公布号 |
US8765555(B2) |
申请公布日期 |
2014.07.01 |
申请号 |
US201213460356 |
申请日期 |
2012.04.30 |
申请人 |
Micron Technology, Inc. |
发明人 |
Van Gerpen Damon E. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
Wells St. John, P.S. |
代理人 |
Wells St. John, P.S. |
主权项 |
1. A method of forming a memory cell comprising first and second electrodes having phase change material and heater material there-between, the method comprising:
lining elevationally inner sidewalls of an opening with conductive material to comprise the first electrode of the memory cell; lining elevationally outer sidewalls of the opening with dielectric material; forming heater material in the opening laterally inward of and laterally over a lateral inner sidewall of the conductive material, the heater material being electrically coupled to the conductive material in the opening; and forming phase change material over the heater material and forming conductive second electrode material electrically coupled to the phase change material. |
地址 |
Boise ID US |