Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp

摘要

A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of: a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T1; and a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature T2 which is lower than the temperature T1.

主权项

1. A method for manufacturing a Group III nitride semiconductor, comprising:
a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of: a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T1; and a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature T2 which is lower than the temperature T1, further comprising: a vacuum step of removing an oxygen layer attached to the surface of the substrate, by preparing a vacuum state in the chamber and heating the substrate to the temperature T1, wherein said first sputtering step and second sputtering step are performed in this order following said vacuum step.