发明名称 |
Patterning method |
摘要 |
According to one embodiment, a patterning method includes exposure-transferring a plurality of first island pattern images and a plurality of second island pattern images onto a resist film, each of the plurality of first island pattern images having a configuration having a contour line or a major axis extending in a third direction, the plurality of first island pattern images having a staggered arrangement, each of the plurality of second island pattern images having a configuration having a contour line or a major axis extending in a fourth direction, the plurality of second island pattern images having a staggered arrangement, the first island pattern images and the second island pattern images being continuous in the first direction by a portion of each of the second island pattern images overlapping one of the first island pattern images. |
申请公布号 |
US8765362(B2) |
申请公布日期 |
2014.07.01 |
申请号 |
US201213720162 |
申请日期 |
2012.12.19 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Oori Tomoya |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A patterning method, comprising:
exposure-transferring a plurality of first island pattern images and a plurality of second island pattern images onto a resist film formed above a plurality of line patterns extending in a first direction and arranged in a second direction orthogonal to the first direction, each of the plurality of first island pattern images having a configuration having a contour line or a major axis extending in a third direction tilted with respect to the first direction and the second direction, the plurality of first island pattern images having a staggered arrangement, each of the plurality of second island pattern images having a configuration having a contour line or a major axis extending in a fourth direction tilted with respect to the first direction and the second direction, the plurality of second island pattern images having a staggered arrangement, the first island pattern images and the second island pattern images being continuous in the first direction by a portion of each of the second island pattern images overlapping one of the first island pattern images; and developing the resist film to make a plurality of holes respectively in regions where the first island pattern images and the second island pattern images overlap, the plurality of holes being positioned above the line patterns, a pitch of the plurality of holes in the second direction being larger than a pitch of the plurality of line patterns in the second direction. |
地址 |
Tokyo JP |