| 发明名称 | Method of manufacturing a p-AlGaN layer | ||
| 摘要 | The method according to the present invention includes a first step of supplying the Group V source gas at a flow rate B1 (0<B1) and supplying the gas containing magnesium at a flow rate C1 (0<C1) while supplying the Group III source gas at a flow rate A1 (0≦A1); and a second step of supplying a Group V source gas at a flow rate B2 (0<B2) and supplying a gas containing magnesium at a flow rate C2 (0<C2) while supplying a Group III source gas at a flow rate A2 (0<A2). The first step and the second step are repeated a plurality of times to form a p-AlxGa1-xN (0≦x<1) layer, and the flow rate A1 is a flow rate which allows no p-AlxGa1-xN layer to grow and satisfies A1≦0.5 A2. | ||
| 申请公布号 | US8765222(B2) | 申请公布日期 | 2014.07.01 |
| 申请号 | US201013512747 | 申请日期 | 2010.12.10 |
| 申请人 | Dowa Electronics Materials Co., Ltd. | 发明人 | Ooshika Yoshikazu;Matsuura Tetsuya |
| 分类号 | C23C16/34 | 主分类号 | C23C16/34 |
| 代理机构 | Oliff PLC | 代理人 | Oliff PLC |
| 主权项 | 1. A method of manufacturing a p-AlGaN layer, the p-AlGaN layer being one p-AlxGa1-xN layer (0≦x<1) doped with magnesium, which is formed by MOCVD, comprising the steps of: a first step of supplying a Group V source gas at a Group V source gas flow rate B1 (0<B1) and supplying a gas containing magnesium at a Mg-containing gas flow rate C1 (0<C1) while supplying a Group III source gas at a Group III source gas flow rate A3 (0<A3); and a second step of supplying a Group V source gas at a Group V source gas flow rate B2 (0<B2) and supplying a gas containing magnesium at a Mg-containing gas flow rate C2 (0<C2) while supplying a Group III source gas at a Group III source gas flow rate A2 (0<A2), wherein the first step and the second step are performed to form the p-AlxGa1-xN layer, and the Group III source gas flow rate A3 is a flow rate which allows only initial growth nuclei of the p-AlxGa1-xN layer to grow and satisfies A3≦0.5A2. | ||
| 地址 | Tokyo JP | ||