Device design for partially oriented rutile dielectrics

摘要

Methods include forming a dielectric layer from a first material above a substrate. The dielectric layer is formed such that a preferred crystal direction for at least one electrical property of the first material is parallel to a surface of the dielectric layer. Next, forming a first and second trench within the dielectric layer wherein the first and second trenches have at least one curved portion. Forming a second material within the first trench and a third material within the second trench wherein the first material is different from the second and third materials. The first and second trenches are separated by a distance between 3-20 nm.

主权项

1. A method for forming a capacitive device, the method comprising:
forming a dielectric layer above a substrate, wherein the dielectric layer comprises a first material; wherein a preferred crystal direction for the dielectric constant of the first material is parallel to a surface of the dielectric layer; forming a first trench within the dielectric layer wherein the first trench has at least one curved portion; forming a second trench within the dielectric layer wherein the second trench has at least one curved portion, wherein the second trench is formed around a perimeter of the first trench; forming a second material within the first trench and a third material within the second trench, wherein each of the second material and the third material are conductive; wherein the first material is different from the second material and the third material; and wherein the first trench and the second trench are separated by a distance between 3-20 nm.