| 发明名称 |
Method for fabricating fin-shaped field-effect transistor |
| 摘要 |
A method for fabricating fin-shaped field-effect transistor (FinFET) is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; forming a first gate structure on the fin-shaped structure; forming a first epitaxial layer in the fin-shaped structure adjacent to the first gate structure; forming an interlayer dielectric layer on the first gate structure and the first epitaxial layer; forming an opening in the interlayer dielectric layer to expose the first epitaxial layer; forming a silicon cap on the first epitaxial layer; and forming a contact plug in the opening. |
| 申请公布号 |
US8765546(B1) |
申请公布日期 |
2014.07.01 |
| 申请号 |
US201313925812 |
申请日期 |
2013.06.24 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Hung Ching-Wen;Wu Jia-Rong;Huang Chih-Sen |
| 分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for fabricating fin-shaped field-effect transistor (FinFET), comprising:
providing a substrate; forming a fin-shaped structure on the substrate; forming a first gate structure on the fin-shaped structure; forming a first epitaxial layer in the fin-shaped structure adjacent to the first gate structure; forming an interlayer dielectric layer on the first gate structure and the first epitaxial layer; forming an opening in the interlayer dielectric layer to expose the first epitaxial layer; forming a silicon cap on the first epitaxial layer; and forming a contact plug in the opening. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
