Semiconductor device

摘要

To provide a semiconductor device including a transistor formed using a highly reliable oxide semiconductor. To provide a semiconductor device which can be manufactured with high productivity and high yield by reducing the number of photolithography steps. The semiconductor device includes a first wiring, a second wiring, and a third wiring whose potential is lower than those of the first wiring and the second wiring between the first wiring and the second wiring. In the semiconductor device, the first wiring is electrically connected to the third wiring through a first transistor in which a gate electrode layer is electrically connected to a source electrode layer, the second wiring is electrically connected to the third wiring through a second transistor in which the gate electrode layer is electrically connected to the source electrode layer, and a continuous oxide semiconductor film used for a semiconductor region of the first transistor and the second transistor is provided above or below the first wiring, the second wiring, and the third wiring.

主权项

1. A semiconductor device comprising:
a first wiring; a second wiring; and a third wiring between the first wiring and the second wiring, wherein a potential of the third wiring is lower than potentials of the first wiring and the second wiring , wherein the first wiring is electrically connected to the third wiring through a first transistor, wherein the first transistor comprises a first gate electrode and a first source electrode electrically connected with each other, and a first semiconductor region, wherein the second wiring is electrically connected to the third wiring through a second transistor, wherein the second transistor comprises a second gate electrode and a second source electrode electrically connected with each other, and a second semiconductor region, wherein the first and second semiconductor regions are provided above or below the first wiring, the second wiring, and the third wiring, and wherein the first and second semiconductor regions are provided in a continuous oxide semiconductor film.