Nanoscale electronic device with barrier layers

摘要

On example of the present invention is a nanoscale electronic device comprising a first conductive electrode, a second conductive electrode, and a device layer. The device layer comprises a first dielectric material, between the first and second conductive electrodes, that includes an effective device layer, a first barrier layer near a first interface between the first conductive electrode and the device layer, and a second barrier layer near a second interface between the second conductive electrode and the device layer. A second example of the present invention is an integrated circuit that incorporates nanoscale electronic devices of the first example.

主权项

1. A nanoscale electronic device comprising:
a first conductive electrode; a second conductive electrode; and a device layer, comprising a first dielectric material, between the first and second conductive electrodes that includes:
an effective device layer between a first barrier layer and a second barrier layer,the first barrier layer near a first interface between the first conductive electrode and the device layer, andthe second barrier layer near a second interface between the second conductive electrode and the device layerwhere each of the first barrier layer and said second barrier layer further comprise a large-band-gap-material layer embedded within a dielectric material, the large-band-gap-material having a band gap that is greater than a band gap of the effective device layer.