发明名称 |
Circuit-protection devices |
摘要 |
In an embodiment, a circuit-protection device has first and second circuit-protection units, each comprising first and second nodes. A gate is between the first nodes of first and second circuit-protection units. The first nodes of first and second circuit-protection units are on a common active region. |
申请公布号 |
US8766365(B2) |
申请公布日期 |
2014.07.01 |
申请号 |
US201213400678 |
申请日期 |
2012.02.21 |
申请人 |
Micron Technology, Inc. |
发明人 |
Smith Mike |
分类号 |
H01L23/62 |
主分类号 |
H01L23/62 |
代理机构 |
Dicke, Billig & Czaja, PLLC |
代理人 |
Dicke, Billig & Czaja, PLLC |
主权项 |
1. A circuit-protection device, comprising:
first and second circuit-protection units, each comprising first and second nodes; and a gate that selectively electrically couples the first node of the first circuit-protection unit to the first node of the second circuit-protection unit in response to a voltage that is selectively applied to a control gate of the gate while a voltage is applied to the first node of the first circuit-protection unit and while a voltage is applied to the first node of the second circuit-protection unit, wherein the voltage that is selectively applied to the control gate of the gate is applied-separately from the voltage applied to the first node of the first circuit-protection unit and separately from the voltage applied to the first node of the second circuit-protection unit; wherein the first nodes of first and second circuit-protection units are on a common active region of a single conductivity type; and wherein the gate is configured to electrically isolate the first nodes of first and second circuit-protection units from each other when the first nodes of first and second circuit-protection units are at different voltages and to couple the first nodes of first and second circuit-protection units when the first nodes of first and second circuit-protection units are at about a same voltage that is higher than either of the different voltages. |
地址 |
Boise ID US |