发明名称 Circuit-protection devices
摘要 In an embodiment, a circuit-protection device has first and second circuit-protection units, each comprising first and second nodes. A gate is between the first nodes of first and second circuit-protection units. The first nodes of first and second circuit-protection units are on a common active region.
申请公布号 US8766365(B2) 申请公布日期 2014.07.01
申请号 US201213400678 申请日期 2012.02.21
申请人 Micron Technology, Inc. 发明人 Smith Mike
分类号 H01L23/62 主分类号 H01L23/62
代理机构 Dicke, Billig & Czaja, PLLC 代理人 Dicke, Billig & Czaja, PLLC
主权项 1. A circuit-protection device, comprising: first and second circuit-protection units, each comprising first and second nodes; and a gate that selectively electrically couples the first node of the first circuit-protection unit to the first node of the second circuit-protection unit in response to a voltage that is selectively applied to a control gate of the gate while a voltage is applied to the first node of the first circuit-protection unit and while a voltage is applied to the first node of the second circuit-protection unit, wherein the voltage that is selectively applied to the control gate of the gate is applied-separately from the voltage applied to the first node of the first circuit-protection unit and separately from the voltage applied to the first node of the second circuit-protection unit; wherein the first nodes of first and second circuit-protection units are on a common active region of a single conductivity type; and wherein the gate is configured to electrically isolate the first nodes of first and second circuit-protection units from each other when the first nodes of first and second circuit-protection units are at different voltages and to couple the first nodes of first and second circuit-protection units when the first nodes of first and second circuit-protection units are at about a same voltage that is higher than either of the different voltages.
地址 Boise ID US